Session Details
[11a-E208-1~11]10.3 Spin devices, magnetic memories and storages
Fri. Sep 11, 2026 9:00 AM - 12:00 PM JST
Fri. Sep 11, 2026 12:00 AM - 3:00 AM UTC
Fri. Sep 11, 2026 12:00 AM - 3:00 AM UTC
E208 (First Year Education Bld. E Block)
[11a-E208-1]Evaluation of the critical current density and magnetization dynamics of SOT Switching in Co/Gd Multilayer
〇Shoko Yoshida1, Dongchan Jeong1, Tetsuma Mandokoro1, Yoichi Shiota1,2, Hisakazu Matsuki1,2, Ryusuke Hisatomi1,2, Shutaro Karube1,2, Teruo Ono1,2,3 (1.ICR, Kyoto Univ., 2.CSRN, Kyoto Univ., 3.SRIS, Tohoku Univ)
[11a-E208-2]Highly effective and external-field-free spin-orbit torque switching of CoFeB/MgO using hybrid in-plane ferromagnet/BiSb topological insulator
〇(P)HOANGHUY HO1, NAMHAI PHAM1 (1.Institute of Science Tokyo)
[11a-E208-3]Manufacturable Top-BiSb SOT-MRAM Using a Conductive RuOx Interlayer
〇(D)Thuan Van Pham1, Ho Hoang Huy1, Pham Nam Hai1 (1.Department of Electrical and Electronic Engineering, Institute of Science Tokyo)
[11a-E208-4]Pulse-width dependence of write error rate in Mn3Sn driven by chiral spin rotation
〇(M1)Yuki Fushimi1,2, Yuma Sato1,2, Haruki Iwai1,2, Yuta Yamane1,5, Shun Kanai1,2,3,4,6,7, Shunsuke Fukami1,2,3,4,8 (1.Lab. for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.Dept. Elec. Eng., Tohoku Univ., 3.CSIS, Tohoku Univ., 4.AIMR, Tohoku Univ., 5.FRIS, Tohoku Univ., 6.EFS, Tohoku Univ., 7.QST, 8.InaRIS)
[11a-E208-5]Effect of antiferromagnetic coupling strength in synthetic free layers on magnetic field response of superparamagnetic tunnel junctions
〇Mototsugu Ohtani1,2, Takuma Kinoshita1,2, Haruna Kaneko1,2, Nuno cacoilo1, Shun Kanai1,2,3,4,5,6, Shunsuke Fukami1,4,7,8 (1.RIEC, Tohoku Univ., 2.Tohoku Univ., 3.WPI-AIMR, Tohoku Univ., 4.CSIS, Tohoku Univ., 5.DEFS, Tohoku Univ., 6.QST, 7.CIES, Tohoku Univ., 8.InaRIS)
[11a-E208-6]Comprehensive Study of Magnetic Tunnel Junctions for Field-Free Energy Harvester with Wireless Signal
〇(M2)Harumi Chiku1,2, Kazunari Kino1,2, Takaaki Dohi1, Shun Kanai1,2,3,4,5,6, Shunsuke Fukami1,2,3,4,7,8 (1.RIEC, Tohoku Univ., 2.Electronic Engineering, Tohoku Univ., 3.WPI-AIMR, Tohoku Univ., 4.CSIS, Tohoku Univ., 5.National Institutes for QST, 6.DEFS, Tohoku Univ., 7.CIES, Tohoku Univ., 8.Inamori Research Institute for Science)
[11a-E208-7]Scaling trend of cosmic-ray soft-errors in STT-MTJ MRAMs
〇Masahiro Inoue1, Daisuke Kobayashi1,2 (1.UTokyo, 2.JAXA)
[11a-E208-8]Enhanced Tunnel Magnetoresistance of High Entropy LiTiMgAlGaO Barrier-Based Magnetic Tunnel Junctions
〇(P)Rombang Rizky Sihombing1, Thomas Scheike1,3, Jun Uzuhashi1, Tadakatsu Ohkubo1, Zhenchao Wen1, Seiji Mitani1,2, Hiroaki Sukegawa1,2 (1.NIMS, 2.Univ. Tsukuba, 3.AIST)
[11a-E208-9]High Tunneling Magnetoresistance Ratio in Magnetic Tunnel Junctions with Metastable Zinc-Blende GaN Tunnel Barriers
〇(D)Hyeokjin Kwon1,2, Kumar Deepak2, Kenya Suzuki1,2, Soma Miki2, Tomohiro Ichinose2, Shigemi Mizukami2,3 (1.Dept. Appl. Phys., Tohoku Univ., 2.WPI-AIMR, Tohoku Univ., 3.CSIS, Tohoku Univ.)
[11a-E208-10]High throughput exploration of Ni-Al spacer composition enhancing magnetoresistance (MR) properties in CPP-GMR devices with half metallic Heusler alloy electrodes
〇(D)MdSarwar Pervez1,2, Vineet Barwal2, Hirofumi Suto2, Suwannharn Nattamon2, Kodchakorn Simalaotao2, Taisuke Sasaki2, Yuya Sakuraba1,2 (1.Tsukuba Univ., 2.NIMS)
[11a-E208-11]Investigation of Critical Thickness of AgSn-spacer in Polycrystalline Co2(Mn,Fe)Ge Heusler based CPP-GMR for Read Head Applications
〇Bang Do1, Kazuumi Inubushi1, Tomoya Nakatani2, Hirofumi Suto2, Taisuke Sasaki2, Yuya Sakuraba2, Tomoyuki Sasaki1 (1.Advanced Products Development Center, Technology & Intellectual Property HQ, TDK Corp., 2.Research Center for Magnetic and Spintronic Materials (CMSM), National Institute for Materials Science (NIMS))
