Presentation Information
[F04-14a-VII-05]Si におけるイオン注入によるバンドギャップ以下の光応答増強と結晶構造の変化
*Keigo Uwasa1, Kosei Yamamoto1, Sangmin Ji1, Eiichi Kuramochi2, Akihiko Shinya2, Hideki Gotoh1 (1. Hiroshima University, 2. NTT Basic Research Laboratories)
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