Presentation Information
[G1-P103-05]Effect of multi-layered metal-thin-film buffer layer on the growth of group III nitride on Si (111)
*Fumio Kawamura1, Kazutaka Mitsuishi2, Hitoshi Tampo3, Takehiko Nagai3 (1. Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS) (Japan), 2. Center for Basic Research on Materials, National Institute for Materials Science (NIMS) (Japan), 3. Research Institute for Energy Efficient Technologies, National Institute of Advanced Industrial Science and Technology (AIST) (Japan))
Keywords:
Group III nitride,Sputtering,Buffer layer,Si wafer