[G1-P103] Poster 103

[G1-P103-09] Evaluation of electronic properties between metal buffer layers and Si(111) substrate for group III nitride growth

*Takehiko Nagai^1,2, Kazutaka Mitsuishi³, Hitoshi Tampo¹, Norio Terada^1,2, Fumio Kawamura³ (1. National Institute of Advanced Industrial Science and Technology (AIST) (Japan), 2. Kagoshima Univ. (Japan), 3. National Institute for Materials Science (NIMS) (Japan))

Keywords:

Photoelectron spectroscopy(UPS,IPES,XPS),Group III-Nitride,Sputtering,Buffer layers