[G4-O101] Oral 101

11:30 AM - 12:00 PM JST(2:30 AM - 3:00 AM UTC)

[G4-O101-04] Preparation and
p e r f ormance of wide gap semiconductor for TFT s , SAW
device , and T E materials

P. K. Song¹, S. H. Kim¹,², S. W. Heo³ (1, Pusan National Univ. (Korea), 2, Uppasala Univ. (Sweden), 3, Korea Institute of Ceramic Engineering and Technology (Korea))

Keywords:

wide gap materials,hybride structure,thermoelectric,passivation layer