[G4-O401] Oral 401

10:00 AM - 10:30 AM JST(1:00 AM - 1:30 AM UTC)

[G4-O401-01] Electronic Structure, Defect Properties, and Electrical Behavior of Tellurium Dioxide Polymorphs: The Challenge of p-Type Doping

*Zewen Xiao¹ (1. Huazhong University of Science and Technology (China))

Keywords:

oxide semiconductor,electronic structure,defect properties,electrical behavior,p-type doping