[G4-O401] Oral 401

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[G4-O401-03] Differentiating the Wavefunctions of Valence and In-Gap States in p-type Semiconductors using Constant-Initial-State Photoelectron Yield Spectroscopy

*Shiun Inoue¹, Manato Tateno¹, Ryotaro Nakazawa², Daichi Miyagi³, Mana Shibata³, Minseok Kim³, Junjun Jia⁴, Yuzo Shigesato³, Hisao Ishii¹ (1. Chiba Univ. (Japan), 2. Department of Photo-Molecular Sci. (Japan), 3. Aoyama Gakuin Univ. (Japan), 4. Waseda Univ. (Japan))

Keywords:

constant-initial-state photoelectron yield spectroscopy,p-type oxide,in-gap states,mobility edge,valence band maximum