Presentation Information
[H3-P102-06]Effect of Post-Annealing and Oxygen Flow Rate on the Structural and Electrical Properties of Sn-Doped β-Ga2O3 Thin Films
*SeungBok Yun1, Jihyeong Kim1, Kyunghwan Kim1, Jeongsoo Hong1 (1. Dept. of Electrical Eng., Gachon Univ. (Korea))
Keywords:
Sn-doped β-Ga2O3,Reactive sputtering,Post-annealing,Carrier concentration