[S1-Poster 201] Poster 201

[S1-Poster_201-33] Dual-Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection-Leakage Trade-Off in Organic Schottky Barrier Transistors

*Hye Ryun Sim¹ (1. Pohang University of Science and Technology (Korea))

Keywords:

organic Schottky barrier transistor,organic vertical transistor,contact resistance,doping