Presentation Information
[S1-Poster_201-36]Electrical Properties of Nitrogen-Doped n-Ga2O3 (010) Layers Formed Using Reactive Ion Etcher
*Akimasa Mineyama1, Masataka Higashiwaki1,2 (1. Osaka Metropolitan Univ. (Japan), 2. NICT (Japan))
Keywords:
Ga2O3,Reactive ion etching,Nitrogen doping,Thermal diffusion