Presentation Information
[S1-Poster_201-37]Direct Nucleation and Epitaxial Growth of Ga2O3 Thin Films on α-Al2O3 Substrates by MOCVD
*Wei-Chun Chen1, Wei-Lin Wang1, Kun-An Chiu1, Hung-Pin Chen1, Yu-Wei Lin1 (1. National Center for Instrumentation Research, National Institutes of Applied Research (Taiwan))
Keywords:
Ga2O3,MOCVD,growth temperature