Materials Research Meeting 2025 (MRM2025)
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Oral SessionG. Advanced Materials and Emerging Technologies for Device Development : [G-1] Nanomaterials and Quantum Materials for Emerging Technologies

[G1-O102]Oral 102

Tue. Dec 9, 2025 2:00 PM - 5:30 PM JST
Tue. Dec 9, 2025 5:00 AM - 8:30 AM UTC
Session 16(G219)
Chair:Yoshitaka Okada(The University of Tokyo), Amaury Delamarre(Center for Nanoscience and Nanotechnology (C2N) (CNRS, Université Paris Saclay))
2:00 PM - 2:10 PM JST(5:00 AM - 5:10 AM UTC)

Time adjustment

2:10 PM - 2:50 PM JST(5:10 AM - 5:50 AM UTC)

[G1-O102-01]Low-Noise Avalanche Photodetectors Through Valence Band Engineering

*Robert Douglas Richards1, Douglas Andrew Crackett1, Xiaofeng Tao1, Dominic Sterland2, Chee Hing Tan1, Gavin Bell2, John Paul David1 (1. Univ. of Sheffield (UK), 2. Univ. of Warwick (UK))
2:50 PM - 3:10 PM JST(5:50 AM - 6:10 AM UTC)

[G1-O102-02]Exploring the Potential of Solution Crystallized AgBiS2 Thin Film for PV Applications

*Ludmila Cojocaru1, Ajay Kumar Jena1, Takaya Kubo2, Satoshi Uchida2, Hiroshi Segawa1,2,3 (1. Komaba Institute for Science, The University of Tokyo (Japan), 2. Research Center for Advanced Science and Technology, The University of Tokyo (Japan), 3. Komaba Organization for Educational Excellence, The University of Tokyo (Japan))
3:10 PM - 3:30 PM JST(6:10 AM - 6:30 AM UTC)

[G1-O102-03]A review on the linear/nonlinear optical properties of laser irradiated chalcogenide thin films and their applications

*Thabang Kealeboga Matabana1, Cosmas M. Muiva1, Botlhe Pule1, Conrad B. Tabi1 (1. Botswana International University of Science and Technology (Botswana))
3:30 PM - 3:50 PM JST(6:30 AM - 6:50 AM UTC)

[G1-O102-04]Controlling the AgBiS2 Colloidal Nanocrystals Formation for High-Performance Optoelectronic Devices

*Fidya Azahro Nur Mawaddah1, Dadan Suhendar1, Yuta Tanaka1, Keishi Kitada1, Toshiki Shimizu1, Hiroki Minoda1, Satria Zulkarnaen Bisri1 (1. Tokyo Univ. of Agri. and Tech. (Japan))
3:50 PM - 4:00 PM JST(6:50 AM - 7:00 AM UTC)

break

4:00 PM - 4:30 PM JST(7:00 AM - 7:30 AM UTC)

[G1-O102-05]High-Concentration Codoped Silicon-on-Insulator Devices with Ultrathin Films for Single-Charge Tunneling Functionalities

*Daniel Moraru1 (1. Shizuoka University (Japan))
4:30 PM - 4:50 PM JST(7:30 AM - 7:50 AM UTC)

[G1-O102-06]Quantum Transport in Graphene Induced by Molecular Adsorption at Nanopore Edges

*Filipe Camargo Dalmatti Alves Lima1, Rafael N.P. Colombo2, Frank N. Crespilho2, Wanderlã L. Scopel3, Rodrigo G. Amorim4 (1. Federal Inst. of Edu., Sci. and Tech. of São Paulo (IFSP) (Brazil), 2. Univ. of São Paulo (Brazil), 3. Federal Univ. of Espírito Santo (Brazil), 4. Federal Fluminense Univ. (Brazil))
4:50 PM - 5:10 PM JST(7:50 AM - 8:10 AM UTC)

[G1-O102-07]Molecular Beam Epitaxial Growth of GaSb on GaAs Substrate with GaAsSb buffer layer

*Vaishnavi Thakur1, Yusuke Oteki1, Vladimir Pillet1, Myeongok Kim1, Yoshitaka Okada1 (1. The University of Tokyo (Japan))
5:10 PM - 5:30 PM JST(8:10 AM - 8:30 AM UTC)

[G1-O102-08]Chirality in the Kagome Metal CsV3Sb5

*Olena Fedchenko1, Hans Joachim Elmers2, Harshit Agarwal2, Olena Tkach2, Yaryna Lytvynenko2, Sergii Chernov3, Moritz Hoesch3, Dmytro Kutnyakhov3, Markus Scholz3, Kai Rossnagel4, Andrey Gloskovskii3, Christoph Schlueter3, Aimo Winkelmann5, Amir Haghighirad6, Matias Schmitt7, Tien-Lin Lee7, Ralph Claessen8, Matthieu Le Tacon, Jure Demsar2, Gerd Schönhense2 (1. GU Frankfurt am Main (Germany), 2. JGU Mainz (Germany), 3. DESY Hamburg (Germany), 4. Universität zu Kiel (Germany), 5. AGH University of Krakow (Poland), 6. KIT Karlsruhe (Germany), 7. DIAMOND (UK), 8. Universität Würzburg (Germany))
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