[16psb] Poster 2

[16psb-29] Monolithic 3D integration of CNTFET and SOT-MTJ for high-performance non-volatility memories

Ke Zhang¹, Ningfei Gao², *Daming Zhou¹, Zhongzhen Tong¹, Hongxi Liu³, Xiaoyang Lin¹, Haitao Xu^2,4, Lianmao Peng², Weisheng Zhao¹ (1. Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University (China), 2. Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-based Electronics, School of Electronics, Peking University (China), 3. Truth Memory Technology Corporation Limited (China), 4. Institute of Carbon-based Thin Film Electronics, Peking University (China))

Keywords:

Monolithic 3D integration,carbon nanotube field-effect transistor,spin-orbit-torque magnetic tunnel junction