[MF1] Thin-Film Devices and Modulator Technologies I

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[MF1-4] Low-loss amorphous-Si Strip-Loaded Thin Film Lithium Niobate on Insulator Waveguides with Compact Bending Radius

○Moataz Eissa¹, Yoshitaka Ohiso¹, Kensuke Ogawa¹, Yuki Nomoto², Tsuyoshi Horikawa¹, Shoichiro Yamaguchi², Masahiko Namerikawa², Nobuhiko Nishiyama^1,3 (1. Electrical and Electronic Engineering Department, Institute of Science Tokyo (Japan), 2. NGK Insulators, Ltd (Japan), 3. Institute of Integrated Research, Institute of Science Tokyo (Japan))

Keywords:

Thin film lithium niobate passive devices

We investigate amorphous-silicon (a-Si) strip-loaded thin film lithium-niobate-on-insulator (TFLN) waveguides. We achieve ~2 dB/cm propagation loss and 0.085 dB/90° bending loss for 20 µm radius.