[TuD2] Advanced Photodetectors

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[TuD2-3] Surface-Illuminated Near-Infrared Ge Photodetector on Si-on-Quartz Substrate with Extended Operating Wavelength

○Ryoya Ogura¹, Koji Abe¹, Yuki Yoshino¹, Naoki Hamada¹, Jose Alberto Piedra-Lorenzana¹, Takeshi Hizawa¹, Toshimasa Umezawa², Naokatsu Yamamoto², Kouichi Akahane², Yasuhiko Ishikawa¹ (1. Toyohashi University of Technology (Japan), 2. National Institute of Information and Communications Technology (Japan))

Keywords:

Photodetectors,Si/Ge,polymer,and novel III-V based active devices

Surface-illuminated near-infrared photodetectors of a strain-enhanced Ge thin film on a Si-on-quartz wafer exhibit a high responsivity of >0.1 A/W not only in the C band but also in the L band.