Presentation Information

[TuD2-4]3-dB Bandwidth Enlargement of an InGaAs Photodiode by Inductive Signal Electrode

○Duk-Jun Kim1, Seok-Jun Yun1, Shinmo An1, Dong-Hun Lee1, Young-Tak Han1 (1. Electronics and Telecommunications Research Institute (ETRI) (Korea))

Keywords:

Photodetectors

Four types of backside-illuminated InGaAs photodiodes, all with a mesa diameter of 10 μm but differing in the width and length of the CPW signal electrode, were fabricated. The fabricated photodiodes exhibited a responsivity of 0.66 A/W. Additionally, a 3-dB bandwidth exceeding 67 GHz was achieved for the photodiodes with a 5 μm-wide and 313 or 513 μm-long signal electrode owing to the inductive peaking.

Comment

To browse or post comments, you must log in.Log in