[TuP-D] Poster Session 1

[TuP-D-1] Photon-Trapping Type Photodetector for High-Sensitivity and High-Speed Communication

○Shun Harada^1,2, Toshimasa Umezawa², Kouichi Akahane², Tetsuya Kawanishi^1,2 (1. Waseda University (Japan), 2. National Institute of Information and Communications Technology (Japan))

Keywords:

Photodetectors,InP/InGaAs based active devices,Micto-optics devices

Photon-trapping structures with periodic micro-hole arrays can enhance the sensitivity of surface-illuminated InP/InGaAs pin photodetectors in the 1.55 µm band, despite a thin absorbing layer for high-speed operation, as shown by FDTD simulations.