Presentation Information

[TuP-D-2]Lasing Characteristics of High-Mesa SCH MQW Laser Diode on Silicon Substrate

○Junyu Zhang1, Zhewen Shi1, Mizuki Kuroi1, Liang Zhao1, Kazuhiko Shimomura1 (1.Sophia University)

Keywords:

Photonic integration-Si photonic and heterogeneous platform

Successful lasing oscillation of GaInAsP high-mesa SCH-MQW laser diode on silicon substrate was achieved. We investigated the differences in threshold current of lasers on InP and Si substrates based on measured values of waveguide loss.