[TuP-D] Poster Session 1

[TuP-D-2] Lasing Characteristics of High-Mesa SCH MQW Laser Diode on Silicon Substrate

○Junyu Zhang¹, Zhewen Shi¹, Mizuki Kuroi¹, Liang Zhao¹, Kazuhiko Shimomura¹ (1. Sophia University (Japan))

Keywords:

Photonic integration-Si photonic and heterogeneous platform

Successful lasing oscillation of GaInAsP high-mesa SCH-MQW laser diode on silicon substrate was achieved. We investigated the differences in threshold current of lasers on InP and Si substrates based on measured values of waveguide loss.