[TuP-D] Poster Session 1

[TuP-D-6] Internal quantum efficiency of active region for GaAsBi-based emitters

○Aiste Staupiene¹, Andrea Zelioli¹, Bronislovas Cechavicius¹, Steponas Raisys², Renata Butkute¹, Evelina Dudutiene¹ (1. Center for Physical Sciences and Technology (Lithuania), 2. Faculty of Physics, Vilnius University (Lithuania))

Keywords:

New functional active devices,Quantum well,quantum dot,and nano-structured photonic devices,Si/Ge,polymer,and novel III-V based active devices,Novel materials and structures

We present a comparative optical study on different GaAsBi/GaAs quantum structures, used as active area for near-infrared emitters. Our findings highlight the role of Bi concentration and growth temperature on carrier recombination and emission efficiency.