Presentation Information
[TuP-D-6]Internal Quantum Efficiency of Active Region for GaAsBi-based Emitters
○Aiste Staupiene1, Andrea Zelioli1, Bronislovas Cechavicius1, Steponas Raisys2, Renata Butkute1, Evelina Dudutiene1 (1Center for Physical Sciences and Technology, 2Vilnius Univ.)
Keywords:
New functional active devices,Quantum well,quantum dot,and nano-structured photonic devices,Si/Ge,polymer,and novel III-V based active devices,Novel materials and structures
We present a comparative optical study on different GaAsBi/GaAs quantum structures, used as active area for near-infrared emitters. Our findings highlight the role of Bi concentration and growth temperature on carrier recombination and emission efficiency.