[TuP-D] Poster Session 1

[TuP-D-7] Optimization of the gain region for large area InGaAs based NIR VECSELs

○Andrea Zelioli¹, Aivaras Špokas^1,2, Kipras Mažeika², Bronislovas Čechavičius¹, Martynas Talaikis¹, Sandra Stanionyte¹, Augustas Vaitkevičius^1,2, Aurimas Čerškus¹, Evelina Dudutiene¹, Renata Butkute^1,2 (1. State research institute Center for Physical Sciences and Technology (Lithuania), 2. Vilnius University, Faculty of Physics, Institute of Photonics and Nanotechnology (Lithuania))

Keywords:

Quantum well,quantum dot,and nano-structured photonic devices.,Semiconductor lasers,optical amplifiers,and light emitting diodes.

This study optimizes the gain region of InGaAs-based Vertical-External-Cavity Surface-Emitting Laser for emission at 975nm to suppress lattice induced mismatch dislocations for large-area fabrication, enhancing device lifetime and performance.