Presentation Information
[TuP-D-9]Optoelectric Properties of AlGaInP-Based 620 nm Micro-LED at Cryogenic Temperature
○Ming-June Wu, Yi-Tzu Tseng, Chee-Keong Yee, Natchanon Prechatavanich, Theeradech Sutheebanjerd, Zhi-An Lin, Chao-Hsin Wu (National Taiwan Univ.)
Keywords:
Semiconductor lasers,optical amplifiers,and light emitting diodes,Advanced active devices,Quantum well,quantum dot,and nano-structured photonic devices
This study investigates the optoelectric properties of AlGaInP-based micro-LED from 300 K to 80 K. Results show temperature-dependent emission shifts, reduced forward currents at low temperature, and increased peak efficiency, though efficiency droop becomes severe at 80 K, providing insights into cryogenic micro-LED applications.