[TuP-D] Poster Session 1

[TuP-D-9] Optoelectric Properties of AlGaInP-Based 620 nm Micro-LED at Cryogenic Temperature

○Ming-June Wu¹, Yi-Tzu Tseng², Chee-Keong Yee², Natchanon Prechatavanich¹, Theeradech Sutheebanjerd¹, Zhi-An Lin², Chao-Hsin Wu³ (1. Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan (Taiwan), 2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan (Taiwan), 3. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (Taiwan))

Keywords:

Semiconductor lasers,optical amplifiers,and light emitting diodes,Advanced active devices,Quantum well,quantum dot,and nano-structured photonic devices

This study investigates the optoelectric properties of AlGaInP-based micro-LED from 300 K to 80 K. Results show temperature-dependent emission shifts, reduced forward currents at low temperature, and increased peak efficiency, though efficiency droop becomes severe at 80 K, providing insights into cryogenic micro-LED applications.