[TuP-E] Poster Session 1

[TuP-E-12] Tuned-Fermi level graphene enhanced stimulated Brillouin scattering on Si

○Xin Meng^1,2, Wuyang Zhong¹, Jiawei Wang¹, Jianan Duan¹, Yong Yao¹, Xiaochuan Xu^1,2,3, Feng He^1,2,3 (1. State Key Laboratory on Tunable Laser Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China (China), 2. Guangdong Provincial Key Laboratory of Aerospace Communication and Networking Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China (China), 3. Guangdong Provincial Key Laboratory of Integrated Photonic-Electronic Chip, Harbin Institute of Technology (Shenzhen), Shenzhen, China 518055 (China))

Keywords:

Micro- and nano-optics and related devices

Through meticulous theoretical investigation, we have demonstrated the realization of highly efficient stimulated Brillouin scarttering (SBS) in a silicon graphene strip waveguide. The optimized waveguide configuration through the Fermi level of graphene on the silicon waveguide, yields remarkable performance metrics. Specifically, we achieved brillouin gain of 9.54w^-1m^-1 by tuning the Fermi level of graphenere, which presents significant advancements in nonlinear optical performance.