[WG1] Advanced Lasers III

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[WG1-4] Generation of 109-fs Ultrashort Pulse from a 70-GHz Semiconductor Mode-locked Laser

○Yue Ying Niu^1,2,3, De Fan Sun^1,2,3, Fei Guo^1,2,3, Rui Kang Zhang^1,2,3, Dai Bing Zhou^1,2,3, Song Liang^1,2,3, Dan Lu^1,2,3 (1. State Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences (China), 2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences (China), 3. Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices (China))

Keywords:

Semiconductor lasers,optical amplifiers,and light emitting diodes

We report a 70 GHz AlGaInAs/InP quantum-well mode-locked laser capable of producing 109 fs pulses with a spectral range spanning the C-band and L-band.