Presentation Information

[WG3-1]Phase-change Photonic Memory for Optical Neural Networks with Nanoseconds in-situ Training Capability

○Hongtao Lin1, Kai Xu1, Maoliang Wei1, Junying Li2, Bo Tang3, Yiting Yun1, Weiquan Wang1, Lan Li4,5 (1. The State Key Lab of Brain-Machine Intelligence, College of Information Science and Electronic Engineering, Zhejiang University (China), 2. Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences (China), 3. Institute of Microelectronics of the Chinese Academy of Sciences (China), 4. Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University (China), 5. Institute of Advanced Technology, Westlake Institute for Advanced Study (China))
Electrically programmable photonic memory based on Sb2Se3 integrated with PIN-diode silicon waveguide heaters were proposed and fabricated. The novel memory devices allow fast in-situ training and zero-static-power-consumption data processing in optical neural networks.

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