[WP-D] Poster Session 2

[WP-D-6] Design, Simulation, and Characterization of InGaAs/AlGaAsSb SPADs

○Xue Wen Liu¹, Yi Shan Lee¹ (1. National Tsing Hua University, Taiwan (Taiwan))

Keywords:

Photodetectors,Novel materials and structures,Si/Ge,polymer,and novel III-V based active devices

We evaluate SPADs with an AlGaAsSb multiplication layer, where simulations indicate low dark current and high responsivity. Measurements at 200 K reveal IV characteristics and activation energy, validating the proposed structure design.