Presentation Information
[WP-G-3]Observation of Nonvolatile Phase Shift in Hf0.5Zr0.5O2 Waveguide Fabricated by Digitally Processed DC Sputtering
○Satoshi Fujiya1, Yudai Katsura1, Yuki Takamatsu1, Hideo Isshiki1 (1.The University of Electro-Communications)
Keywords:
Optical memory and nonvolatile photonic devices,Programmable,reconfigurable photonics,Photonics in neuromorphic computing and machine learning devices,Photonic quantum computing
A 300 nm Hf0.5Zr0.5O2 (HZO) film was synthesized without heating, exhibiting ferroelectricity. HZO buried optical waveguides had a high confinement factor resulting in a one-time nonvolatile phase shift even at low electric fields.