Session Details
Semiconductor laser devices
Tue. Apr 22, 2025 1:00 PM - 2:00 PM JST
Tue. Apr 22, 2025 4:00 AM - 5:00 AM UTC
Tue. Apr 22, 2025 4:00 AM - 5:00 AM UTC
303 (Conference Center)
[ALPS-D1-01]Optimized Butt-Joint Growth of 100 Gb/s Electro-Absorption Modulated Laser
*Mengyang Zhong1,2,3,4, Huan Li2,3,4, Yueying Niu2,3,4, Defan Sun2,3,4, Yanrong Song1, Song Liang2,3,4, Daibing Zhou2,3,4 (1. School of Physics and Optoelectronic Engineering, Beijing University of Technology, 2. Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, 3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 4. Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices)
[ALPS-D1-02]1.3-μm Reflection Insensitive High-speed Directly Modulated DFB Laser Having a MQW Based DBR Section
*Huan Li1,2,3, Mengyang Zhong1,3, Xinkai Xiong1,2,3, Daibing Zhou1,2,3, Dan Lu1,2,3, Song Liang1,2,3 (1. Institute of Semiconductors, CAS, 2. University of Chinese Academy of Sciences, 3. Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices)
[ALPS-D1-03]A 50 Gb/s Widely Tunable Directly Modulated InGaAlAs/InP MQW DBR Laser
*Daibing Zhou1, Mengyang Zhong1, Huan Li1, Dan Lu1, Song Liang1 (1. Institute of Semiconductors, Chinese Academy of Sciences)
[ALPS-D1-04]Wavelength-Shift-Keying Communication with Forward-Biased RZ-ASK of Electro-Absorption Modulator
*Yen-Hsiang Chou1, Gong-Ru Lin1 (1. National Taiwan University)