GaN-based Lasers

9:00 AM - 9:30 AM JST(12:00 AM - 12:30 AM UTC)

[LDC6-01(Invited)] AlGaN-based UV-B Laser Diodes: Growth-Temperature Optimization, >50% Carrier Injection Efficiency, and Room-Temperature CW Lasing at 318 nm

*Motoaki Iwaya¹, Takumu Saito¹, Rintaro Miyake¹, Sho Iwayama¹, Hideto Miyake², Satoshi Kamiyama¹, Tetsuya Takeuchi¹ (1. Meijo University, 2. Mie University)