Session Details
Invited session2
Tue. Apr 21, 2026 2:00 PM - 4:00 PM JST
Tue. Apr 21, 2026 5:00 AM - 7:00 AM UTC
Tue. Apr 21, 2026 5:00 AM - 7:00 AM UTC
211+212 (Pacifico Yokohama Conference Center)
Session Chair: Yoshio Honda (Nagoya Univ.)
[LEDIA2-01(Invited)]High Power GaN-based Laser Diodes
*Yoshitaka Nakatsu1, Ryotaro Konishi1, Katsuhiro Konishi1, Tsuyoshi Hirao1, Yoji Nagao1, Tomoya Yanamoto1, Shin-ichi Nagahama1 (1. Nichia Corporation)
[LEDIA2-02(Invited)]Optical characterization of semiconductor crystalswith high quantum efficiency of radiation
*Kazunobu Kojima1, Shuhei Ichikawa1 (1. The Univerisity of Osaka)
[LEDIA2-03(Invited)]GaN Photoemission-Based Electron Beam Devices Enabling Innovative Metrology and Inspection in Semiconductor Manufacturing
*Tomohiro Nishitani1,2 (1. Photo electron Soul Inc., 2. Nagoya University)
[LEDIA2-04(Invited)]Engineering Light Emission in InGaN/GaN QWs: Plasmon-Assisted and Cooperative Perspectives toward High-Speed and Energy-Efficient LEDs
*Koichi Okamoto1 (1. Osaka Metropolitan University)
