[Poster: 3P01-97] 3P01-97

Japanese

[3P95] Observation of Substrate Dependence of the Primary Process of Carrier Diffusion in MoSe₂ by using Femtosecond Transient Absorption Microscopy

*Sho YAMANOUCHI¹, Naohiko ENDO², Kenji WATANABE³, Takashi TANIGUCHI³, Yasumitsu MIYATA³, Tetsuro KATAYAMA⁴, Akihiro FURUBE⁴ (1. Grad. Sch. of Sci. & Tech., Tokushima Univ., 2. Dept. of Phys., Tokyo Metropolitan Univ., 3. National Institute for Materials Science, 4. pLED Lab, Tokushima Univ.)

Keywords:

Transition metal dichalcogenides,Femtosecond transient absorption microscopy,Carrier diffusion