Presentation Information
[P1-72]Spin-Hall Transport in Rare-Earth Iron Garnet/Heavy Metal Heterostructures: Impact of Interface and Garnet Bulk Composition Modulation
Peigen Li1, *Chi Wah Leung1 (1. Department of Applied Physics, The Hong Kong Polytechnic University (Hong Kong))
Keywords:
Rare-earth iron garnet,thin films,spin Hall effect,devices
Rare earth ion garnets (REIG) with intrinsic magnetic compensation behaviour exhibit unique advantages in spintronics investigations. Latest anomalous Hall resistance (RAHE) measurements based on REIG/heavy metal (HM) bilayers (such as GdIG/Pt and TbIG/Pt) show abnormal sign cross-over temperature (T1) in addition to magnetization compensation temperature (Tcomp). Previous works have revealed the mechanisms of these two temperature anomality points in RAHE vs temperature plots, but little attention was paid to regulate them. Here we systematically studied the impact of (1) REIG bulk composition modulation and (2) REIGs/Pt interface on spin magnetotransport, based on the TbIG/Pt system (Tcomp ~ 220 K for TbIG) with added EuIG (which shows no Tcomp). In bilayer TbIG/EuIG film system, a changing EuIG thickness can regulate the Tcomp as measured in TbIG/EuIG/Pt Hall bar devices, which was attributed to the ferromagnetic coupling between TbIG and EuIG. Besides, a sandwich TbIG/EuIG/TbIG stack with fixed TbIG and EuIG thickness was constructed. As the EuIG gradually moves away from Pt in the trilayer stack covered with Pt Hall bar, Tcomp shows no variations while T1 demonstrates strong REIG/Pt interface sensitivity. This study provides reference for designing controllable spintronics devices like magnon valve applications.
Research was supported Hong Kong Research Grants Council (15302320)
Research was supported Hong Kong Research Grants Council (15302320)