SISPAD2026
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Session Details

OralSession 2: Transport

[Session 2]Session 2: Carrier Transport

Mon. Sep 28, 2026 1:10 PM - 2:50 PM JST
Mon. Sep 28, 2026 4:10 AM - 5:50 AM UTC
Room A2(3rd floor)
1:10 PM - 1:30 PM JST(4:10 AM - 4:30 AM UTC)

[Session_2-01]Three-Dimensional Quantum Transport in Nanosheet FETs: Effects of Contacts, Geometry, and Multi-Stacks

*Seungjin Lee1, Soyeon Park1, Seunghyun Song2, Mincheol Shin1 (1. Korea Advanced Inst. of Sci. and Tech., 2. Samsung Electronics)
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1:30 PM - 1:50 PM JST(4:30 AM - 4:50 AM UTC)

[Session_2-02]Alloy-scattering-limited Hole Mobility in SiGe:
First-principles-based Multi-scale Approach

*Gyeongwon Roh1, Yeongjun Lim1, Mincheol Shin1 (1. Korea Advanced Inst. of Sci. and Tech.)
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1:50 PM - 2:10 PM JST(4:50 AM - 5:10 AM UTC)

[Session_2-03]Framework for Investigating Cryogenic Hole Mobility in Group-IV-Alloy Quantum Wells

*Siddhant Sushil Gangwal1, Shunda Chen2, Tianshu Li2, Michael Povolotskyi3, Dragica Vasileska1 (1. Arizona State University, 2. George Washington University, 3. Amentum Solutions)
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2:10 PM - 2:30 PM JST(5:10 AM - 5:30 AM UTC)

[Session_2-04]Two-Particle Monte Carlo for TCAD: Fermionic
Treatment of Electron–Electron Scattering

*Josef Gull1, Hans Kosina1 (1. TU Vienna, Inst. for Microelectronics)
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2:30 PM - 2:50 PM JST(5:30 AM - 5:50 AM UTC)

[Session_2-05]Quantum Transport Simulation Considering Self-Energy for Surface Roughness in Nanosheet FETs

*Sung-Min Hong1, Phil-Hun Ahn2 (1. Gwangju Inst. of Sci. and Tech., 2. Korea Advanced Inst. of Sci. and Tech.)
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