[3] Silicon Quantum Devices | SNW2025

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Session 3: Silicon Quantum DevicesSession 3: Silicon Quantum Devices

[3]Silicon Quantum Devices

Sun. Jun 8, 2025 11:00 AM - 12:25 PM JST
Sun. Jun 8, 2025 2:00 AM - 3:25 AM UTC

Suzaku III(Suzaku III)

Chair:Takahide Oya(Yokohama National University), Pei-Wen Li(National Yang Ming Chiao Tung University (NYCU))

11:00 AM - 11:25 AM JST(2:00 AM - 2:25 AM UTC)

[3-01]Room temperature dopant-atom quantum dot transistors in silicon

*Zahid Durrani¹ (1. Imperial College London (UK))

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11:25 AM - 11:45 AM JST(2:25 AM - 2:45 AM UTC)

[3-02]Experimental Demonstration of Vertically Stacked Parallel Silicon Quantum Dots

*Daiki Futagi¹, Junoh Kim¹, Tomoko Mizutani¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi^1,3, Toshiro Hiramoto¹ (1. IIS, The Univ, of Tokyo (Japan), 2. AIST (Japan), 3. d.lab, The Univ, of Tokyo (Japan))

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11:45 AM - 12:05 PM JST(2:45 AM - 3:05 AM UTC)

[3-03]Parallel Silicon Single-Electron Pumps for Generating Nanoampere Current

*Gento Yamahata¹, Takase Shimizu¹, Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (1. NTT Basic Research Laboratories (Japan))

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12:05 PM - 12:25 PM JST(3:05 AM - 3:25 AM UTC)

[3-04]High-Temperature Single-Electron Tunneling Through P-donors Affected By Confinement

*Pooja Sudha¹, Soumya Chakraborty¹, Daniel Moraru², Arup Samanta¹ (1. Indian Institute of Technology Roorkee (India), 2. Research Institute of Electronics, Shizuoka University (Japan))

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