[C-2A] Microwave and Millimeter Wave Active Devices and Circuits

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[C-2A-03] Development of a Compact X-band GaN Power Amplifier Using Reducing FET Cells

〇Koji Takahashi¹, Tomohiro Senju¹, Takayuki Takida¹ (1. Toshiba Corporation)

Keywords:

GaN,Power Amplifier