[C-2A] Microwave and Millimeter Wave Active Devices and Circuits

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[C-2A-11] Study on layout design for high-power GaN-GAD quasi-millimeter-wave rectifiers

〇hidemasa Takahashi¹, Yuji Ando^1,2, Akio Wakejima³, Jun Suda^1,2 (1. Nagoya University, 2. Nagoya University IMaSS, 3. Kumamoto University)

Keywords:

GaN,HEMT,rectifier,Diode