[C-2A] Microwave and Millimeter Wave Active Devices and Circuits

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[C-2A-10] Evaluation results of a Ka-band GaN rectenna

〇Kenji Itoh¹, Yugo Takashima¹, Naoki Sakai¹, Haruki Ichikawa¹, Nobuyori Yaeo¹, Koji Yamanaka¹ (1. Kanazawa Institute of Technology)

Keywords:

Rectenna,GaN SBD

We report on the prototyping and evaluation results of a K-band rectenna using commercially available GaN SBDs with high breakdown voltage (60 V or higher) and high cutoff frequency (1 THz or higher).