International Conference on Solid State Devices and Materials
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1972 Conference on Solid State Devices
Aug 30
- Aug 31, 1972
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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1972 Conference on Solid State Devices
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1972 Conference on Solid State Devices
Aug 30
- Aug 31, 1972
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[2-4]
Effects of Deep Level Centers on Microwave Frequency Characteristics of GaAs Schottky Barrier Gate FET
S. ASAI, Y. ISHIOKA, H. KURONO, S. TAKAHASHI, H. KODERA(1.Central Research Laboratory, Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1972.2-4
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