[I-T]Narrow-Gap Semiconductor Lasers and Detectors
I. Melngailis(1.Lincoln Lab., Massachusetts Institute of Technology)
1972 Conference on Solid State Devices
Aug 30 - Aug 31, 1972The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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1972 Conference on Solid State Devices
Aug 30 - Aug 31, 1972The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(45)
[S-1]Surface Wave Devices
S. Furukawa T. Inamura(1.Tokyo Institute of Technology, 2.Nippon Telegraph and Telephone Public Corporation)
[1-1]CONTROLLABLE NONLINEAR INTERACTIONS BETWEEN ELASTIC SURFACE WAVES AND CARRIERS IN Si-LiNbO3 MIS STRUCTURE
S. Takada, K. Hoh, H. Hayakawa, N. Mikoshiba(1.Electrotechnical Laboratory)
[1-2]Surface-Wave Convolver Using Nonlinear Electron Interactions in Coupled Semiconductor-Piezoelectric Systems
Masamichi Yamanishi, Takao Kawamura(1.Department of Electrical Engineering, College of Engineering, University of Osaka Prefecture)
[1-3]Acoustic surface wave image scanner
K. Asakawa, I. Uchida(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[S-2]Microwave Devices
R. Nii, T. Sugano, I. Kuru, K. Sekido(1.Nippon Telegraph and Telephone Public Corporation, 2.University of Tokyo, 3.Tokyo Shibaura Electric Co., Ltd., 4.Nippon Electric Co., Ltd.)
[2-1]Ultrasonic Amplification Influenced by High-Mobility Electrons in Piezoelectric Se-Te Alloy Crystals at Room Temperature
Tadashi SHIOSAKI, Shigehiro MIYATAKE, Tuneo MITUYU, Masumi OBATA, Akira KAWABATA(1.Department of Electronics, Kyoto University)
[2-2]Millimeter-Wave GaAs Schottky-Barrier IMPATT Diode
Kiyoshi Nawata, Mutsuo Ikeda, Yasuhiro Ishii(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corpration)
[2-3]30 GHz GaAs Schottky Barrier IMPATT Diodes
Masatoshi MIGITAKA, Michiharu NAKAMURA, Katsutoshi SAITO, Yoichi KANEKO(1.Central Research Laboratory, Hitachi Ltd.)
[2-4]Effects of Deep Level Centers on Microwave Frequency Characteristics of GaAs Schottky Barrier Gate FET
S. ASAI, Y. ISHIOKA, H. KURONO, S. TAKAHASHI, H. KODERA(1.Central Research Laboratory, Hitachi Ltd.)
[2-5]Self Aligned GaAs Schottky Barrier Gate FET using Preferential Etching
Yasuo Tarui, Yoshio Komiya, Takao Yamaguchi(1.Electrotechnical Laboratory)
[S-3]Ion Implantation & Device Technology (I)
M. Yasufuku H. Kodera(1.Fujitsu Co., Ltd., 2.Hitachi Ltd.)
[3-1]NEW SEMICONDUCTOR BUBBLE DOMAIN DETECTOR EMPLOYING THE HALL EFFECT ASSOCIATED WITH AN INVERTED MAGNETIC FIELD
Shoei Kataoka, Hideo Yamada, Yoshinobu Sugiyama(1.Electrotechnical Laboratory)
[3-2]A New Spectroscopic Method of Measuring Transient Temperature Distribution in High Power Thyristors
Junji Sakurai(1.Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)
[3-3]INPROVEMENT OF THE SHALLOW BASE TRANSISTOR TECHNOLOGY BY USE OF A DOPED POLY-SILICON DIFFUSION SOURCE
M. Takagi, K. Nakayama, C. Terada, H. Kamioka(1.IC Engineering Department, Fujitsu Limited)
[S-4]Ion Implantation & Device Technology (II)
S. Namba, T. Tokuyama, M. Tsurushima, H. Ohmura(1.Osaka University, 2.Hitachi Ltd., 3.Electrotechnical Laboratory, 4.Tokyo Shibaura Electric Co., Ltd.)
[4-1]Low Energy Implantation of Boron into Silicon
N. Yoshihiro, T. Tokuyama(1.Central Reseach Laboratory, Hitachi Ltd.)
[4-2]Observation of Lattice Defects in Ion-Implanted Si Wafer by A Double Crystals Spectrometer Method
Seigo KISHNO, Atsuko NODA(1.Central Research Laboratory, Hitachi, Ltd.)
[4-3]Study on Three-Dimensional Distribution of Implanted Ions by He+ Backscattering Technique
Hiroshi ISHIWARA, Seijiro FURUKAWA, Hideki MATSUMURA, Nobuyoshi NATSUAKI(1.Department of Physical Electronics, Faculty of Engineering Tokyo Institute of Technology)
[4-4]Ion Implantation of Te and Sb in GaAs
Kenji Gamo, Mikio Takai, Kohzoh Masuda, Susumu Namba(1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)
[4-5]Formation of Optical Waveguide by Ion-Implantation into Fused Quartz
H. Aritome, T. Ikegami, T. Nishimura, K. Masuda, S. Namba(1.Faculty of Engineering Science, Osaka University)
[S-5]MOS & Memory Devices
M. Nagata, Y. Tarui, T. Aoki, S. Kubo(1.Hitachi Ltd., 2.Electrotechnical Laboratory, 3.Sony Corporation)
[5-1]Non Volatile Optical Pattern Memory using MAOS Structure
Yasuo Tarui, Yoshio Komiya, Tsunenori Sakamoto(1.Electrotechnical Laboratory)
[5-2]A New Non-Volatile Read Write Random Access Memory Operation by Means of Avalanche-Tunnel Injection in MNOS Transistor
Y. Uchida, Y. Nishi, I. Nojima, K. Tanaka, K. Tamaru(1.Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)
[5-3]Stacked-Gate Avalanche-Injection Type MOS (SAMOS) Memory
H. Iizuka, T. Sato, F. Masuoka, K. Ohuchi, H. Hara, H. Tango, M. Ishikawa, Y. Takeishi(1.Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)
[5-4]Device Design of E/D Gate MOS-FET
H. Masuda, T. Masuhara, M. Nagata, N. Hashimoto(1.Central Research Laboratory, HitachiLtd.)
[5-5]A 1024 bit N-Channel MOS high speed RAM
J. Mogi, K. Miyasaka, S. Enomoto(1.FUJITSU LIMITED)
[S-6]MOS & Charge Transfer Devices
K. Takeishi, N. Kawamura, Y. Itoh, Y. Komiya(1.Tokyo Shibaura Electric Co., Ltd., 2.Nippon Electric Co., Ltd., 3.Hitachi Ltd., 4.Electrotechnical Laboratory)
[6-1]Properties of MOS Structures Prepared on Substrates having Ion Implanted Impurity Distribution Profile
T. Warabisako, I. Yoshida, T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[6-2]New Modes of Operation in Plasma-Coupled Devices
K. Kawarada, Y. Yamamoto, K. Yano, T. Suzuki(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)
[6-3]Properties of a Schottky-Barrier Transistor and the Carrier-Coupling Devices
Ken-ichi CHINO, Toshimasa SUZUKI, Yoshihiko MIZUSHIMA(1.The Electrical Communication Laboratories, NTT)
[6-4]Bias Charge Optimization of High Speed CCD Operation
Yoshiaki Kamigaki, Hideo Sunami, Yokichi Itoh(1.Central Research Laboratory, Hitachi, Ltd.)
[6-5]AN IMPROVEMENT ON STRUCTURE OF CHARGE-COUPLED DEVICES
Tadayoshi MIFUNE, Shigeyuki OCHI, Yasuo KANO(1.SONY Corporation Research Center)
[S-7]Optoelectronic Devices (I)
S. Tanaka, I. Akasaki, A. Ishida, T. Igo(1.University of Tokyo, 2.Matsushita Electric Industrial Co., Ltd., 3.Nippon Telegraph and Telephone Public Corporation)
[7-1]Light Valve Array Utilizing Ferroelectric SBN Single Crystal
Takahito YAZAKI, Keiichi KANATANI, Sud〓o SAKAMOTO(1.Sanyo Electric Co., Ltd., Research Center)
[7-2]A New Voltage-Tunable Light Deflector by Use of Off-Axis Acoustic Domain in CdS Crystals
Seijiro FURUKAWA, George MOTOSUGI(1.Department of Physical Electronics, Faculty of Engineering Tokyo Institute of Technology)
[7-3]Efficient "Photon Drag" Detector Using p-Type Tellurium
Somsak PANYAKEOW, Junji SHIRAFUJI, Yoshio INUISHI(1.Faculty of Engineering, Osaka University)
[7-4]Highly Sensitive Amorphous Optical Memory
M. Terao, H. Yamamoto, E. Maruyama(1.Central Research Laboratory, Hitachi Ltd.)
[7-5]Field Enhanced Processes in Photodoping Effects in Amorphous As2S3
Akihisa MATSUDA, Makoto KIKUCHI(1.Electrotechnical Laboratory)
[S-8]Optoelectronic Devices (II)
I. Hayashi, K. Maeda, A. Kasami, Y. Nannichi(1.Nippon Electric Co., Ltd., 2.Tokyo Shibaura Electric Co., Ltd.)
[8-1]The Optical Characteristics of Mesa-stripe-geometry Double-heterostructure Injection Lasers
T. Tsukada, N. Chinone, R. Ito, H. Nakashima, O. Nakada(1.Central Research Laboratory, Hitachi, Ltd.)
[8-2]GaAs Light Coupled Device
Z. Tani, K. Murata, T. Sakurai, T. Inoguchi(1.Central Research Lab., SHARP Corporation)
[8-3]Green-Light-Emitting Diodes of GaP Doped with Oxygen and Indium
Akira TANAKA, Hiroshi KOBAYASHI, Hiroyuki ITOH, Katsuo HARA, Tokuzo SUKEGAWA(1.Research Institute of Electronics, Shizuoka University)
[8-4]CdS ELECTROLUMINESCENT DIODES PRODUCED BY NITROGEN ION IMPLANTATION
Y. Shiraki, T. Shimada, T. Ikezu, K. F. Komatsubara(1.Central Research Laboratory, Hitachi Ltd.)
[8-5]Optical and Electrical Properties of Liquid Crystal Mixtures
Susumu Sato, Masanobu Wada(1.Department of Electronic Engineering, Tohoku University)
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