Sep 2 - Sep 3, 1974The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[B3-2]Impurity Concentrotion Profiles of Diffused Boron and Phosphorus in SiO2/Si and Poly Si/SiO2/Si Structures Measured by Auger Electron Spectroscopy
T. Inoue, S. Horiuchi, S. Yoshii(1.Toshiba R and D Center, Tokyo Shibaura Electric Co., Ltd.)