[AO-1]PRESENT AND FUTURE TRENDS IN VISIBLE DISPLAYS
John L. Moll(1.HEWLETT PACKARD)
1974 Conference on Solid State Devices
Sep 2 - Sep 3, 1974The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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1974 Conference on Solid State Devices
Sep 2 - Sep 3, 1974The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(45)
[AO-2]SOLID-STATE ASPECTS OF SOLAR ENERGY CONVERSION
B. O. Seraphin(1.Optical Sciences Center University of Arizona)
[AO-3]Superconductive Tunnel Junctions for Computer Applications
J. Matisoo(1.IBM Thomas J. Watson Research Center)
[A1-1]Buried-Heterostructure Injection Lasers
Toshihisa Tsukada(1.Central Research Laboratory, Hitachi, Ltd.)
[A1-2]DFB Laser in CdS under Electron Beam Excitation
Yoshinobu AOYAGI, Susumu NAMBA(1.The Institute of Physical and Chemical Research)
[A1-3]Stimulated Emission in InSb under the Two-Photon Excitation
Tamio YOSHIDA, Kazuhiko MIYAZAKI, Kazuo FUJISAWA(1.Faculty of Engineering Science, Osaka University)
[A1-4]Alloying behavior of Au and Au-Zn on Gap
Kiyoshi YONEDA, Hazime TAKESADA, Masaaki YAMAMURO(1.Research Center, Sanyo Electric Co., Ltd., 2.Semiconductor Division, Tokyo Sanyo Electric Co., Ltd.)
[A2-1]A New Light Modulator Using Perturbation of Synchronism between Two Coupled Guides
Kunio TADA, Keikichi HIROSE(1.Department of Electronic Engineering, the University of Tokyo)
[A2-2]Effecient Mode Conversion between TE and TM Modes of Optical Guided Waves by Acoustic Surface-Waves
Hiroshi SASAKI, Jun-ichi KUSHIBIKI, Noriyoshi CHUBACHI(1.Research Institute of Electrical Communication, Tohoku University)
[A2-3]Optical Waveguide with Nonvolatile Conductor-Insulators-Semiconductor Memory Structures on a Silicon Substrate
Y. Komiya, T. Sakamoto, E. Suzuki, Y. Tarui(1.Electrotechnical Laboratory)
[A2-4]Reversible Optical Memory Effect due to Evaporation and Deformation of Organic Compounds
M. Terao(1.Central Research Laboratory, Hitachi Ltd.)
[B1-1]INDUCED DEFECTS IN CRYSTALS THRCUGH MECHANICAL PROCESSINGS
Shin. Takasu, Y. Matsushita(1.Toshiba R. and D. Center)
[B1-2]Perfect Crystal device Technology
H. Muraoka, M. Watanabe, T. Yonezawa(1.Semiconductor Material and Process Engineering Department Tokyo Shibaura Electric Co.)
[B1-3]A NOVEL AND HIGH PERFORMANCE BIPOLAR DEVICE OF LOW EMITTER IMPURITY CONCENTRATION STRUCTURE
H. Yagi, T. Tsuyuki(1.SONY Corporation, Atsugi Plant)
[B2-1]The Application of Gas Plasma to the Fabrication of MOS LSI
Haruhiko Abe(1.Central Research Labratories, Mitsubishi Electric Corp.)
[B2-2]A Novel Planar Multilevel Interconnection Technology Utilizing Polyimide
SEIKI HARADA, KIKUJI SATO, ATSUSHI SAIKI, TAKESHI KIMURA TOSHIO OKUBO, KIICHIRO MUKAI(1.Central Research Laboratory, Hitachi Ltd.)
[B2-3]IPOS Scheme : A New Isolation Technique for Integrated Circuits
S. Nakajima, Y. Watanabe, T. Yokoyama, K. Kato(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)
[B2-4]Defects in Heavily Phosphorus-Implanted Si Observed after Drive-in Process
T. Ikeda, M. Tamura, N. Yoshihiro, T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[A3-1]PLZT Analogue Space Modulator
A. Kumada, K. Suzuki, K. Kitta(1.Central Research Laboratory, Hitachi, Ltd.)
[A3-2]PHOTO-INDUCED CHANGE OF TRANSPARENCY IN PLZT CERAMICS
Wataru Endo, Junji Inui, Kentaro Hirata(1.Fujitsu Laboratories, Ltd.)
[A3-3]Graded-Composition Chalcogenide-Glass Photodiode
E. MARUYAMA, T. HIRAI, T. FUJITA, N. GOTO, Y. ISOZAKI, K. SHIDARA(1.Central Research Laboratory, Hitachi Ltd., 2.Electron Tube Division, Hitachi Ltd., 3.NHK Technical Research Laboratories)
[A3-4]Inherent Memory Effects in ZnS:Mn Thin-Film EL Devices
M. Takeda, Y. Kakihara, M. Yoshida, J. Kawaguchi, H. Kishishita, Y. Nakata Y. Yamauchi, T. Inoguchi, S. Mito(1.Central Research Lab., SHARP Corporation)
[A4-1]Reliability of Solid State Oscillators
Ken-ich CHINO, Yoshinori WADA, Kaneharu FUKUDA(1.Musashino Electrical Communication Laboratory, NTT)
[A4-2]Microwave Oscillation with GaAs FET
Shinji OKAZAKI, Susumu TAKAHASHI, Minoru MAEDA, Hiroshi KODERA(1.Central Research Laboratory, Hitachi, Ltd.)
[A4-3]Control of Two-Dimensional High Field Domain in Gunn Effect Functional Devices
T. Nakamura, S. Hasuo, G. Goto, K. Kazetani, H. Ishiwari, H. Suzuki, T. Isobe(1.Fujitsu Laboratories Ltd.)
[A5-1]Effect of Overcoating SiO Thin Films on Monolithic Elastic Surface Wave Amplifiers
Kazuhiko Yamanouchi, Tetsuro Konno, Kimio Shibayama(1.Research Institute of Electrical Communication, Tohoku University)
[A5-2]Low-Frequency Piezoelectric-Transducer Applications of ZnO Film
Tadashi Shiosaki, Yoshio Yasumoto, Hideharu Ieki, Akira Kawabata(1.Department of Electronics, Faculty of Engineering Kyoto University)
[A5-3]Active Light Deflector by Use of Amplified SAW in CdS
Seijiro FURUKAWA, Toshiaki KOYAMA, Shigetaka MATSUMOTO, Chikara TSUCHIYA(1.Research Laboratory of Precision Machinery and Electronics Tokyo Institute of Technology)
[A5-4]TeO2 ACOUSTO-OPTIC TUNABLE FILTER
Akinori Watanabe, Tsutomu Yano(1.Matsushita Research Institute Tokyo, Inc.)
[A6-1]Preparation of Josephson Junction by DC anodization
M. Koyanagi, S. Koga, T. Endo, G. Yonezaki, A. Nakamura(1.Electrotechnical Laboratory)
[A6-2]Observation of a New Phenomenon in Superconducting-Normal Junctions
Ienari Iguchi(1.Department of Mathematical Engineering and Instrumentation Physics University of Tokyo)
[B3-1]Application of radioactivation analysis for the determination of trace amounts of elements in semiconductor materials
Kiyoshi Kudo(1.Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
[B3-2]Impurity Concentrotion Profiles of Diffused Boron and Phosphorus in SiO2/Si and Poly Si/SiO2/Si Structures Measured by Auger Electron Spectroscopy
T. Inoue, S. Horiuchi, S. Yoshii(1.Toshiba R and D Center, Tokyo Shibaura Electric Co., Ltd.)
[B3-3]Biomedical Cation Sensor Using Field Effect of Semiconductor
Masayoshi ESASHI Tadayuki MATSUO(1.Department of Electronic Engineering Tohoku University)
[B4-1]The Bulk Charge Transfer Device
M. Kubo(1.Central Research Laboratory, Hitachi Ltd.)
[B4-2]An Improved Charge-Coupled Analog Delay Line
T. Sakaue, M. Iwasawa, Y. Horiike, K. Matsushima(1.Toshiba Research and Development Center Tokyo Shibaura Electric Co., Ltd.)
[B4-3]Very High Speed, Clock-Pulse-Less Scanner for Solid State Imager
N. Koike, T. Kamiyama, M. Ashikawa, M. Ozawa(1.Hitachi Central Research Laboratory)
[B5-1]Ferroelectric Field Effect Memory Device Using Bismuth Titanate Film
Y. Kurogi, N. Endo, K. Sugibuchi(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[B5-2]The Nature and Mechanism of Degradation in MNOS Read write Memory
Teruo Tanaka, Yoshio Nishi(1.Toshiba R & D Center, Tokyo Shibaura Electric Co.)
[B5-3]A lKb N-Silicon-Gate Static Random-Acess Memory with Two Different Depletion-Load Thresholds
K. Ohuchi, S. Tanaka, K. Ara, Y. Tanuma, N. Kubota, S. Horiuchi(1.Toshiba Research and Development Center, Tokyo Shibaura Electric Co., Ltd.)
[B6-1]Logic Circuits with 2μm Gate Schottky Barrier FETs
S. Suzuki, H. Muta, Y. Nagahashi, K. Yamada, T. Tanaka, H. Okabayashi, N. Kawamura(1.Central Research Laboratories, Nippon Electric Co., Ltd.)
[B6-2]N-channel Si-gate MOS Devices on Sapphire Substrates
Hiroyuki TANGO, Jun IWAMURA, Mituo ISOBE, Keji MAEGUCHI, Minoru KIMURA(1.TOSHIBA Research and Development Center Tokyo Shibaura Electric Co., Ltd.)
[B6-3]CONTINUOUSLY VARIABLE THRESHOLD VOLTAGE DEVICES
Tadanori YAMAGUCHI, Shuichi SATO, Teruaki AOKI(1.SONY CORPORATION, Semiconductor Division)
[B6-4]MOSFET'S WITH REDUCED LOW FREQUENCY l/f NOISE
H. Katto, Y. Kamigaki, Y. Itoh(1.Central Research Laboratory, Hitachi Ltd.)
[B6-5]Device Design of an Ion Implanted High Voltage MOSFET
I. Yoshida, T. Masuhara, M. Kubo, T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
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