1976 International Conference on Solid State Devices
Sep 1 - Sep 3, 1976The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
1976 International Conference on Solid State Devices
Sep 1 - Sep 3, 1976The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[B-1-6]Improvement of Planar GaAs Devices by Controlling the Properties of the Epilayer and the Epilayer - Substrate Interface
L. M. F. Kaufmann, K. Heime(1.University of Duisburg, Semiconductor Electronics Laboratory)
