[A-0-2]SILICON WIZARDRY
M. P. Lepselter, C. H. Sequin(1.Bell Laboratories)
1976 International Conference on Solid State Devices
Sep 1 - Sep 3, 1976The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
Search
1976 International Conference on Solid State Devices
Sep 1 - Sep 3, 1976The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(101)
[A-0-3]The Potential of Electron Beam Technology for Microfabrication
T. H. P. Chang(1.IBM T. J. Watson Research Center)
[A-0-4]Growth and Doping Kinetics in Molecular Beam Epitaxy
B. A. Joyce, C. T. Foxon(1.Mullard Research Laboratories)
[A-0-5]Integrated Optics
A. Yariv(1.California Institute of Technology)
[A-1-1]New Developments in Materials and Processing Aspects of Silicon Device Technology
Bruce E. Deal(1.Fairchild Camera and Instrument Corporation)
[A-1-2]A New Technique for Low Concentration Diffusion of Boron into Silicon
Ginjiro Kambara, Susumu Koike, Toshio Matsuda, Morio Inoue(1.Research Laboratory, Matsushita Electronics Corporation)
[A-1-3]Stepped Electrode Transistor : SET
Tetsushi Sakai, Yoshio Sunohara, Yutaka Sakakibara, Junichi Murota(1.Musashino Electrical Communication Laboratory Nippon Telegraph and Telephone public Corporation)
[A-1-4]Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implanted Samples
N. Natsuaki, M. Tamura, M. Miyao, T. Tokuyama(1.Central Research Laboratory, Hitachi Ltd.)
[A-1-5]Schottky Barrier Height Control by Using Knock-on Effect in Ion Implantation
Hiroshi Ishiwara, Seijiro Furukawa(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
[A-1-6]PRESENT STATUS AND FUTURE ASPECTS OF THE ELECTRON BEAM EXPOSURE DEVICES
Jacques TROTEL, Georges PIRCHER(1.THOMSON-CSF- Central Research Laboratory)
[A-1-7]X-RAY LITHOGRAPHY
Henry I. Smith(1.Lincoln Laboratory, Massachusetts Institute of Technology)
[A-1-8]New Application of Se-Ge Glasses to Silicon Microfabrication Technology
A. Yoshikawa, H. Nagai, Y. Mizushima(1.Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)
[A-1-9]Glass Flow Mechanism of Phosphosilicate Glass and its Application to MOS Devices
N. Hashimoto, Y. Yatsuda, S. Mutoh(1.Central Research Laboratory, Hitachi Ltd.)
[B-1-1]Recent Developments in Microwave Devices
K W Gray(1.Royal Signals and Radar Establishment)
[B-1-2]Submillimeter Wave Si P+-P-N+ IMPATT Diodes
Masayuki Ino, Tadao Ishibashi, Masamichi Ohmori(1.Musashino Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation)
[B-1-3]High Power, High reliability p-n Junction GaAs Impatt Diodes for J-Band
S. Mitsui, K. Nishitani, O. Ishihara, H. Sawano, H. Miki(1.Central Research Laboratory, Mitsubishi Electric Corporation)
[B-1-4]Formation of Silicon P+πPNμN+ structure by Epitaxial Growth
K. Takahashi, S. Takamiya, S. Mitsui, H. Miki(1.Mitsubishi Electric Corporation, Central Research Laboratories)
[B-1-5]GaxIn1-xSb GUNN DIODES
K. Segawa, M. Otsubo, H. Miki, K. Shirahata, K. Fujibayashi(1.Central Research Laboratory, Manufacturing Development Laboratory, Mitsubishi Electric Corporation)
[B-1-6]Improvement of Planar GaAs Devices by Controlling the Properties of the Epilayer and the Epilayer - Substrate Interface
L. M. F. Kaufmann, K. Heime(1.University of Duisburg, Semiconductor Electronics Laboratory)
[B-1-7]Sub-Micron Gate GaAs MESFETs with Ion-Implanted Channels
T. Nozaki, K. Ohata(1.Central Research Laboratories, Nippon Electric Company Ltd.)
[B-1-8]A Half-micron Gate GaAs FET Fabricated by Chemical Dry Etching
S. Takahashi, F. Murai, H. Kurono, M. Hirao, H. Kodera(1.Central Research Laboratory Hitachi Ltd.)
[A-2-1]I2L - Efficient Bipolar LSI Extension
H. H. Berger(1.IBM Laboratories)
[A-2-2]Vertical Injection Logic -An improved form of Integrated Injection Logic-
T. Nakano, Y. Horiba, K. Kijima(1.Mitsubishi Electric Corporation)
[A-2-3]RECENT DEVELOPMENT OF GUNN EFFECT LOGIC DEVICES
Toyosaku ISOBE, Shintaro YANAGISAWA, Tetsuo NAKAMURA(1.FUJITSU LABORATORIES LTD.)
[A-2-4]Phosphorous Buried Emitter I2L for High-voltage Operating Circuits
T. Watanabe, T. Okabe, M. Nagata(1.Central Research Laboratory, Hitachi Ltd.)
[A-2-5]High Precision, High Speed Analog/Digital LSI Techniques
D. R. Breuer, A. S. Temlin(1.TRW Systems)
[A-2-6]Static Induction Logic -- A Simple Structure With Very Low Switching Energy and Very High Packing Density
Jun-ichi Nishizawa, Bogdan M. Wilamowski(1.Research Institute of Electrical Communication Tohoku University)
[A-3-1]Future Trend of Static Induction Transistor and Its Application for Integrated Circuits
Jun-ichi Nishizawa(1.Research Institute of Electrical Communication, Tohoku University)
[A-3-2]DSA MOS transistor and its Integrated Circuit
Yutaka Hayashi, Toshihiro Sekigawa, Yasuo Tarui(1.Electrotechnical Laboratory)
[A-3-3]Fully Ion Implanted DSA MOS IC
I. Ohkura, M. Ohmori, K. Shimotori, T. Nakano, Y. Hayashi, Y. Tarui(1.Mitsubishi Electric Corporation, 2.Electrotechnical Laboratory)
[A-3-4]Analytical Techniques for the Design of DMOS Transistors
Toshiaki Masuhara, Richard S. Muller(1.Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory University of California)
[A-3-5]Grooved Gate MOSFET
S. Nishimatsu, Y. Kawamoto, H. Masuda, R. Hori, O. Minato(1.Central Research Laboratory, Hitachi Ltd.)
[A-3-6]Electronic Watches Using Quartz Crystal Oscillators
T. Hama(1.Suwa Seikosha Co., Ltd.)
[A-3-7]Nonvolatile Semiconductor Memory
Yoshio Nishi, Hisakazu Iizuka(1.Toshiba Research and Development Center Tokyo Shibaura Electric Co., Ltd.)
[A-3-8]New Two-Terminal C-MNOS Memory Cells
Susumu Koike, Gota Kano, Akio Kashiwakura, Ginjiro Kambara, Iwao Teramoto(1.Research Laboratory, Matsushita Electronics Corporation)
[A-3-9]Studies of Localized Charge Injection in Surface Avalanched PN Junctions
R. Amantea, R. S. Muller(1.Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory University of California)
[A-4-1]Power Handling Capability of MOSFET
Minoru NAGATA(1.Central Research Laboratory, Hitachi, Ltd.)
[A-4-2]Deep Levels in GaAs and GaP
T. Ikoma, M. Takikawa, T. Okumura(1.Institute of Industrial Science, University of Tokyo)
[A-4-3]Optical Compensation Profiling in Direct-Gap Epitaxial Layers
E. Wagner, W. Bludau, T. Kamiya(1.Max-Planck Institut fur Festkorperforschung, 2.Department of Electronic Engineering, University of Tokyo)
[A-4-4]LIQUID-PHASE EPITAXIAL GROWTH, ELECTRON VELOCITY, AND MAXIMUM DRIFT VELOCITTY OF In1-xGaxAs(x≒0.5) FOR MICROWAVE DEVICES
A. Sasaki, Y. Takeda, N. Shikagawa, T. Takagi(1.Department of Electronics, Kyoto University)
[B-2-1]Josephson Devices as Potential Circuit Elements in Ultra-Fast Computers
H. H. Zappe(1.IBM T. J. Watson Research Center)
[B-2-2]Dynamic behavior of long Josephson junctions
Takeshi IMAMURA, Shinya HASUO, Toyosaku ISOBE(1.Fujitsu Laboratories, Ltd.)
[B-2-3]Thin film SQUIDs for magnetic field measurements
T. Wiik, T. Stubb G. Ehnholm(1.Technical Research Centre of Finland, 2.Helsinki University of Technology)
[B-3-1]CHARACTERISTICS OF THE INDIUM- AND GALLIUM-DOPED SILICON INFRARED SENSING MOSFET's (IRFET's)
L. Forbes, K. W. Loh, L. L. Wittmer(1.Department of Electrical Engineering University of California, 2.Department of Electrical Engineering University of Arkansas)
[B-3-2]Double-Junction Photosensitive Devices with High UV Responsivity
W. v. Munch(1.Institut A fur Werkstoffkunde, Technische Universitat)
[B-3-3]Design and Characteristics of Low Noise and High Speed Silicon Avalanche Photodiodes
Hiroshi KANBE, Tatsuya KIMURA, Yoshihiko MIZUSHIMA, Kenji KAJIYAMA(1.Musashino Electrical Communication Laboratory, NTT)
[B-3-4]Cadmium Telluride Nuclear Radiation Detectors
P. Hoschl, P. Polivka, V. Prosser, M. Skrivankova, M. Vidra(1.Institute of Physics of the Charles University)
[B-3-5]Hot Carrier-Voltaic Effect in P-N Junction and Its Application to Electron Emitters and Light Detectors
M. Umeno, H. Hattori, T. Jimbo, Y. Sugito(1.Department of Electronics, Faculty of Engineering, Nagoya University)
[B-4-1]AlGaAs Heterostructures in Integrated Optics
Zh. I. Alferov(1.Academy of Sciences of the USSR)
[B-4-2]IV - VI Narrow Gap Semiconductors and Devices
J. Hesse(1.AEG - TELEFUNKEN Forschungsinstitut)
101 results ( 1 - 50 )
- 1