International Conference on Solid State Devices and Materials
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1976 International Conference on Solid State Devices
Sep 1
- Sep 3, 1976
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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1976 International Conference on Solid State Devices
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1976 International Conference on Solid State Devices
Sep 1
- Sep 3, 1976
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[B-1-8]
A Half-micron Gate GaAs FET Fabricated by Chemical Dry Etching
S. Takahashi, F. Murai, H. Kurono, M. Hirao, H. Kodera(1.Central Research Laboratory Hitachi Ltd.)
https://doi.org/10.7567/SSDM.1976.B-1-8
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