1976 International Conference on Solid State Devices
Sep 1 - Sep 3, 1976The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
1976 International Conference on Solid State Devices
Sep 1 - Sep 3, 1976The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[B-3-1]CHARACTERISTICS OF THE INDIUM- AND GALLIUM-DOPED SILICON INFRARED SENSING MOSFET's (IRFET's)
L. Forbes, K. W. Loh, L. L. Wittmer(1.Department of Electrical Engineering University of California, 2.Department of Electrical Engineering University of Arkansas)
