1979 International Conference on Solid State Devices
Aug 27 - Aug 29, 1979The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
1979 International Conference on Solid State Devices
Aug 27 - Aug 29, 1979The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[A-3-7]High Speed C-MOS IC Using Buried SiO2 Layer Formed by Ion Implantation
Katsutoshi Izumi, Masanobu Doken, Hisashi Ariyoshi(1.Research and Development Bureau, 2.and Musashino Electrical Communication Laboratory N.N.T.)
