1979 International Conference on Solid State Devices
Aug 27 - Aug 29, 1979The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
1979 International Conference on Solid State Devices
Aug 27 - Aug 29, 1979The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[B-1-6]Power GaAs MESFETs with a Graded Recess Structure
Asamitsu HIGASHISAKA, Takashi FURUTSUKA, Yoichi AONO, Yoichiro TAKAYAMA, Fumio HASEGAWA(1.Central Research Laboratories, 2.Nippon Electric Co., Ltd.)
