International Conference on Solid State Devices and Materials
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1979 International Conference on Solid State Devices
Aug 27
- Aug 29, 1979
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
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1979 International Conference on Solid State Devices
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1979 International Conference on Solid State Devices
Aug 27
- Aug 29, 1979
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[B-2-1]
Interface Effects on Drain Current Instabilities in GaAs MESFETs with Buffer Layer
T. Itoh, H. Yanai(1.Department of Electronic Engineering, 2.University of Tokyo)
https://doi.org/10.7567/SSDM.1979.B-2-1
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