1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

Aug 27 - Aug 29, 1979The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
International Conference on Solid State Devices and Materials
1979 International Conference on Solid State Devices

1979 International Conference on Solid State Devices

Aug 27 - Aug 29, 1979The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[B-2-1]Interface Effects on Drain Current Instabilities in GaAs MESFETs with Buffer Layer

T. Itoh, H. Yanai(1.Department of Electronic Engineering, 2.University of Tokyo)
https://doi.org/10.7567/SSDM.1979.B-2-1