1982 International Conference on Solid State Devices
Aug 24 - Aug 26, 1982Sunshine City Prince Hotel, Tokyo, Japan
[A-2-4]Hot-Electron Trapping Effects of Short Channel 64 K dynamic MOS RAM
M. Yamada, H. Matsumoto, T. Kobayashi, M. Kumanoya, M. Taniguchi, T. Nakano(1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)