[A-1-1]VLSI Technology Overviews and Trends
S. M. Sze(1.Bell Laboratories)
1982 International Conference on Solid State Devices
Aug 24 - Aug 26, 1982Sunshine City Prince Hotel, Tokyo, Japan
You can search for presentations in this event.
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1982 International Conference on Solid State Devices
Aug 24 - Aug 26, 1982Sunshine City Prince Hotel, Tokyo, Japan
You can search for presentations in this event.
SearchSearch Results(119)
[A-1-2]GaAs MIS STRUCTURES - PROMISING OR HOPELESS?
H. C. Gatos, J. Lagowski, T. E. Kazior(1.Massachusetts Institute of Technology)
[A-1-3]Epitaxial Silicide Films for Integrated Circuits and Future Devices
Seijiro FURUKAWA, Hiroshi ISHIWARA(1.Graduate School of Science and Engineering, Tokyo Institute of Technology)
[A-1-4]n-i-p-i Superlattices - Novel Semiconductors with Tunable Properties
G. H. Dohler(1.Max-Planck-Institut fur Festkorperforschung, Heisenbergstrasse 1)
[A-1-5]Surface Acoustic Wave Resonators on Silicon
R. L. Gunshor(1.School of Electrical Engineering, Purdue University)
[A-2-1]LSIs for COmmunication Uses
Toshimasa SUZUKI, Kotaro KATO(1.Musashino Electrical Communication Laboratory, NTT)
[A-2-2]A 1K bit Associative Memory LSI
T. Nikaido, T. Ogura, S. Hamaguchi, S. Muramoto(1.Musashino Electrical Communication Laboratory, N.T.T.)
[A-2-3]New dynamic RAM cell combined with Hi-C structure
H. Ozaki, K. Shimotori, K. Fujishima, S. Satoh, T. Nakano(1.LSI Research & Development Lab., Mitsubishi Electric Corp.)
[A-2-4]Hot-Electron Trapping Effects of Short Channel 64 K dynamic MOS RAM
M. Yamada, H. Matsumoto, T. Kobayashi, M. Kumanoya, M. Taniguchi, T. Nakano(1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)
[A-2-5]Redundancy Techniques for Dynamic RAMs
Katsuhiro Shimohigashi, Masamichi Ishihara, Shinji Shimizu(1.Central Research Laboratory, and Device Development Center, HITACHI Ltd.)
[A-2-6]Soft-Error Analysis of Fully Static MOS RAM
M. Yoshimoto, K. Anami, H. Shinohara, Y. Hirata, T. Yoshihara, T. Nakano(1.LSI Research & Development Lab., Mitsubishi Electric Corp.)
[A-2-7]LIMITS TO VLSI DEVICES (TENTATIVE)
J. BARKER(1.UNIVERSITY OF WARWICK)
[B-2-1]Dynamic Single-Mode Semiconductor Lasers
Yasuharu SUEMATSU(1.Physical Electronics Tokyo Institute of Technology)
[B-2-2]Low Threshold Current 1.3 μm InGaAsP Buried Crescent Lasers
R. Hirano, E. Oomura, H. Higuchi, Y. Sakakibara, H. Namizaki, W. Susaki(1.LSI Research & Development Laboratory, Mitsubishi Electric Corp.)
[B-2-3]Threshold Condition and Design of Surface Emitting GaInAsP/InP Injection Lasers
H. Soda, Y. Motegi, K. Iga(1.Tokyo Institute of Technology)
[B-2-4]InGaAsP/InP laser diodes mounted on semi-insulating SiC ceramics
S. Tsuji, M. Mizuishi, Y. Nakayama, M. Shimaoka, M. Hirao(1.Central Research Laboratory, Hitachi, Ltd., 2.Mechanical Research Laboratory, Hitachi, Ltd.)
[B-2-5]Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs
O. Ueda, S. Komiya, S. Yamakoshi, I. Umebu, K. Akita(1.Fujitsu Laboratories Ltd.)
[B-2-6]GaP Green LED Degradation Associated with Nonstoichiometric Layer Created during Electrode Formation Process
A. Yahata, M. Kawachi, Y. Iizuka, T. Beppu(1.Research and Development Center, Optoelectronic Semiconductor Engineering Dept., Toshiba Corp.)
[B-2-7]ION-BEAM TECHNIQUES IN PROCESSING OF GaAs LASERS
C. Lindstrom, P. Tihanyi(1.Xerox Palo Alto Research Centers)
[C-2-1]Growth of Undoped Semi-insulating GaAs Single Crystals
T. Fukuda(1.Optoelectronics Joint Research Laboratory)
[C-2-2]Characterization of Semi-Insulating GaAs Substrates for GaAs ICs
S. Miyazawa, Y. Nanishi(1.Musashino Electrical Communication Laboratory, N.T.T.)
[C-2-3]Characterization of Computer Controlled GaP Single Crystals
M. Watanabe, J. Ushizawa, S. Washizuka, Y. Kokubun(1.Toshiba Research and Development Center, Toshiba Corporation)
[C-2-4]Modified Schottky Barrier Heights by Interfacial Doped Layers: MBE Al on GaAs
Stephen J. Eglash, Shihong Pan, Dang Mo, William E. Spicer, Douglas M. Collins(1.Stanford Electronics Laboratories, Stanford University, 2.Solid State Laboratory, Hewlett-Packard Laboratories)
[C-2-5]Recent Advances in Josephson Device and Material
Hisao Hayakawa(1.Electrotechnical Laboratory)
[C-2-6]Hysteresis Loop in Current-Voltage Curve for BaPb0.7Bi0.3O3 Josephson Junction Array in a Microwave Field
M. Ito, Y. Enomoto, T. Murakami(1.Ibaraki Electrical Communication Laboratory, NTT)
[C-2-7]Josephson Full Adder Circuit Using Four-Junction Logic(4JL) Gate
Hiroshi Nakagawa, Eiichi Sogawa, Susumu Takada, Hisao Hayakawa(1.Electrotechnical Laboratory)
[A-3-1]High Voltage Dielectric Isolated IC Technology
Y. Sugawara, T. Kamei, Y. Hosokawa, S. Okuhara, I. Oohinata(1.Hitachi Research Laboratory and Totsuka Works, Hitachi, Ltd.)
[A-3-2]Novel Gate-Protection Devices for MOSFET's
Isao YOSHIDA, Takeaki OKABE, Kazutoshi ASHIKAWA, Shigeo OOTAKA(1.Central Research Laboratory, 2.Takasaki Works, Hitachi Ltd.)
[A-3-3]Compatible High and Low Voltage CMOS Devices using SIMOX Technology
Masahiro AKIYA, Sadao NAKASHIMA, Kotaro KATO(1.Musashino Electrical Communication Laboratory, N.T.T.)
[A-3-4]MNOS Retention-Endurance Characteristics Enhancement Using Graded Nitride Dielectric
Yukun Hsia, Eden Mei, Kia L. Ngai(1.McDonnell Douglas Astronautics Company, 2.Naval Research Laboratory)
[A-3-5]Diffusion Length Measurement Using Dynamic MOS RAM
M. Kumanoya, M. Taniguchi, M. Yamada, T. Kobayashi, Y. Nagayama, T. Nakano(1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)
[A-3-6]New Observation of Hot-Carrier Injection Phenomena
Y. Nakagome, E. Takeda, H. Kume, S. Asai(1.Central Research Laboratory, Hitachi Ltd.)
[A-3-7]HIGH-PERFORMANCE SCHOTTKY-BARRIER IR-CCD IMAGE SENSORS
W. F. Kosonocky, H. Elabd(1.RCA Laboratories)
[A-3-8]High density frame transfer image sensor
G. A. Beck, M. G. Collet, J. A. A. van Gils, A. J. Klinkhamer, P. L. Peek, W. N. J. Ruis, J. G. van Santen, T. F. Smit, G. T. J. Vandormael(1.Philips Research Laboratories)
[A-4-1]A New Linearity Error Correction Tecnology for A/D and D/A Conversion LSI
Y. Akazawa, Y. Matsuya, A. Iwata(1.NTT Musashino Electrical Comminucation Laboratory)
[A-4-2]A 10 Bit All-Parallel A/D Converter
M. Inoue, T. Takemoto, H. Sadamatsu, A. Matsuzawa, K. Aono, K. Tsuji(1.Semiconductor Reseach Laboratory, Matsushita Electric Industrial Co., Ltd.)
[A-4-3]High Speed Bipolar ECL Devices Using Vertically Isolated Self-aligned Transistor
T. Fujita, H. Sakai, K. Kawakita, T. Takemoto(1.Semiconductor Research Laboratory, Matsushita Electric Industrial Co., Ltd.)
[A-4-4]Very wide-band silicon bipolar monolithic amplifiers
M. Ohara, T. Kamoto, T. Sakai(1.Musashino Electrical Communication Laboratory, NTT)
[A-4-5]A NEW HIGH POWER SWITCHING TRANSISTOR
Krishan S. Tarneja(1.Semiconductor Division, Westinghouse Electric Corporation)
[A-4-6]Modeling of the "Bipolar mode" of operation of vertical JFET devices
P. Spirito, G. Vitale(1.University of Naples, Istituto Elettrotecnico)
[A-4-7]Tapered Sidewall Schottky Diodes with Very Low Taper Angles
Yearn-Ik Choi, Choong-Ki Kim, Young-Se Kwon(1.Department of Electrical Science, Korea Advanced Institute of Science and Technology)
[A-4-8]Precision Reactive Etching & Its Applications
J. S. Lechaton, G. Srinivasan, S. Gaur(1.IBM General Technology Division)
[ES-1]AMORPHOUS AND POLYCRYSTALLINE SILICON THIN FILM DEVICES
Y. HAMAKAWA, J. J. HANAK, Y. KUWANO, E. MARUYAMA, M. MATSUMURA, F. MORIN, I. SHIMIZU(1.Osaka Univ., 2.RCA, 3.Sanyo, 4.Hitachi, 5.Tokyo Inst. Tech., 6.CNET)
[B-3-1]Monolithic Hot Electron Transistors in Silicon with FT > 1 GHz
J. M. Shannon, J. A. G. Slatter(1.Philips Research Laboratories)
[B-3-2]Lateral Unidirectional Bipolar-type Insulated-gate Transistors-Operations, Characteristics and Applications-
Yasuhisa Omura(1.Musashino Electrical Communication Laboratory, N.T.T.)
[B-3-3]A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)
Ken YAMAGUCHI, Yasuhiro SHIRAKI, Yoshifumi KATAYAMA, Yoshimasa MURAYAMA(1.Central Research Laboratory, Hitachi, Ltd.)
[B-3-4]Rotating MNOS Device Using a PVD Electrode Deposited on a Diamond Stylus
S. Iwamura, Y. Nishida(1.NHK Technical Research Laboratories)
[B-3-5]A Novel Integrated Optical Bistable Device
J. Yumoto, H. Yajima, S. Ishihara, J. Shimada, M. Nakajima(1.Electrotechnical Laboratory, 2.Keio University)
[B-3-6]MONOLITHIC INTEGRATED DEVICE FOR LIGHT AMPLIFICATION
Akio SASAKI, Ken-ichi MATSUDA, Yuichiro KIMURA, Shigeo FUJITA(1.Department of Electrical Engineering, Kyoto University)
[B-3-7]Characteristics of Double-Heterostructure Lasers in Strong Magnetic Fields
Y. Arakawa, H. Sakaki, M. Nishioka, G. Kido, N. Miura(1.University of Tokyo)
119 results ( 1 - 50 )
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