1983 Conference on Solid State Devices and Materials
Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
1983 Conference on Solid State Devices and Materials
Aug 30 - Sep 1, 1983The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
[A-3-2]Growth Conditions of Evaporated Amorphous Si Films onto SiO2, Patterns by Lateral Solid Phase Epitaxy
Hiroshi Yamamoto, Hiroshi Ishiwara, Seijiro Furukawa, Masao Tamura, Takashi Tokuyama(1.Department of Applied Electronics, Tokyo Institute of Technology, 2.Central Research Laboratroy, Hitachi Ltd.)
